• DocumentCode
    1862604
  • Title

    Resistive switching in metal-oxide-metal devices: Fundamental understanding in relation to material characterization

  • Author

    Vallee, C. ; Mannequin, C. ; Gonon, P. ; Latu-Romain, L. ; Grampeix, H. ; Jousseaume, V.

  • Author_Institution
    Lab. des Technol. de la Microelectron., UJF, Grenoble, France
  • fYear
    2013
  • fDate
    Sept. 30 2013-Oct. 3 2013
  • Firstpage
    151
  • Lastpage
    158
  • Abstract
    This emerging technology tutorial is focused on Resistive non-volatile memories based on a MIM structure with a high k dielectric such as HfO2.
  • Keywords
    MIM devices; hafnium compounds; high-k dielectric thin films; random-access storage; HfO2; MIM structure; high k dielectric; material characterization; metal-oxide-metal devices; resistie switching; resistive nonvolatile memories; Dielectrics; Electrodes; Gold; Hafnium compounds; Plasmas; Tin; HfO2; MIM; RRAM; non-volatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
  • Conference_Location
    Bordeaux
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4799-0126-5
  • Type

    conf

  • DOI
    10.1109/BCTM.2013.6798164
  • Filename
    6798164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1862604