DocumentCode :
1862604
Title :
Resistive switching in metal-oxide-metal devices: Fundamental understanding in relation to material characterization
Author :
Vallee, C. ; Mannequin, C. ; Gonon, P. ; Latu-Romain, L. ; Grampeix, H. ; Jousseaume, V.
Author_Institution :
Lab. des Technol. de la Microelectron., UJF, Grenoble, France
fYear :
2013
fDate :
Sept. 30 2013-Oct. 3 2013
Firstpage :
151
Lastpage :
158
Abstract :
This emerging technology tutorial is focused on Resistive non-volatile memories based on a MIM structure with a high k dielectric such as HfO2.
Keywords :
MIM devices; hafnium compounds; high-k dielectric thin films; random-access storage; HfO2; MIM structure; high k dielectric; material characterization; metal-oxide-metal devices; resistie switching; resistive nonvolatile memories; Dielectrics; Electrodes; Gold; Hafnium compounds; Plasmas; Tin; HfO2; MIM; RRAM; non-volatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
ISSN :
1088-9299
Print_ISBN :
978-1-4799-0126-5
Type :
conf
DOI :
10.1109/BCTM.2013.6798164
Filename :
6798164
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1862604
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