DocumentCode :
1862906
Title :
A low-phase-noise monolithically integrated 60 GHz push-push VCO for 122 GHz applications in a SiGe bipolar technology
Author :
Chakraborty, Arpan ; Trotta, Saverio ; Weigel, Robert
Author_Institution :
RF Innovation, Infineon Technol. AG, Neubiberg, Germany
fYear :
2013
fDate :
Sept. 30 2013-Oct. 3 2013
Firstpage :
195
Lastpage :
198
Abstract :
This paper presents a 60 GHz push-push VCO fabricated in an automotive qualified SiGe:C bipolar production technology with an ft of 170 GHz and fmax of 250 GHz. The VCO uses an AC coupled varactor and features a transmission line based biasing scheme for the varactor to improve the phase noise. The VCO can be tuned from 58.2 GHz to 63 GHz and achieves a minimum phase noise of -108 dBc/Hz at 1 MHz offset. The phase noise remains below -105 dBc/Hz over the entire tuning range. The VCO consumes 145 mW from a 3.3 V power supply.
Keywords :
Ge-Si alloys; automotive electronics; bipolar MIMIC; carbon; millimetre wave oscillators; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; AC coupled varactor; SiGe:C; automotive qualified bipolar production technology; frequency 58.2 GHz to 122 GHz; low-phase-noise monolithically integrated push-push VCO; phase noise; power 145 mW; transmission line based biasing scheme; voltage 3.3 V; Phase noise; Power transmission lines; Silicon germanium; Temperature measurement; Tuning; Varactors; Voltage-controlled oscillators; 122 GHz; 60 GHz; SiGe; VCO; bipolar; fundamental suppression; low phase noise; push-push;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
ISSN :
1088-9299
Print_ISBN :
978-1-4799-0126-5
Type :
conf
DOI :
10.1109/BCTM.2013.6798174
Filename :
6798174
Link To Document :
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