• DocumentCode
    1862989
  • Title

    Improved reliability self-aligned C/X-band monolithic power HBT amplifiers fabricated with a low-stress process

  • Author

    Henderson, T.S. ; Kim, T.S.

  • Author_Institution
    Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1996
  • fDate
    3-6 Nov. 1996
  • Firstpage
    27
  • Lastpage
    30
  • Abstract
    We report extensive reliability testing and analysis on GaAs single-finger C/X-band HBTs fabricated for monolithic amplifiers with a low-stress process, The HBTs are self-aligned to maximize RF power performance, with ledge passivation and a low stress epitaxial base and dielectric overcoat to improve reliability. Performed from T/sub jo/=185-340/spl deg/C and J/sub co/=25-50 kA/cm/sup 2/. The temperature and current dependence of the various observed failure modes and mechanisms are described. Long-term (>3000 hour), low temperature (<250/spl deg/C), high current stress tests are found to be accurate indicators of how HBTs degrade under nominal operating conditions. Shorter, high temperature tests may lead to excessively optimistic predictions of activation energy and median time to failure.
  • Keywords
    III-V semiconductors; MMIC power amplifiers; bipolar MMIC; failure analysis; gallium arsenide; heterojunction bipolar transistors; integrated circuit reliability; integrated circuit testing; passivation; 185 to 340 degC; C-band; GaAs; RF power performance; X-band; activation energy; dielectric overcoat; failure modes; high current stress tests; ledge passivation; low-stress process; median time to failure; power HBT amplifiers; reliability; self-aligned circuits; Automatic testing; Dielectrics; Gallium arsenide; Heterojunction bipolar transistors; Passivation; Performance analysis; Radio frequency; Radiofrequency amplifiers; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-3504-X
  • Type

    conf

  • DOI
    10.1109/GAAS.1996.567629
  • Filename
    567629