Title :
Polarization dependent inter-subband transitions in n-type InGaAs/GaAs and p-type SiGe/Ge self assembled dots: theoretical studies
Author :
Lin, Yih-Yin ; Singh, Jasprit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
This work presents the results of polarization dependence of inter-subband absorption in the n-doped InAs/GaAs quantum dots as a function of dot shapes and as a function of dot compositions in p-doped SiGe/Si dots.
Keywords :
III-V semiconductors; elemental semiconductors; energy gap; gallium arsenide; germanium; indium compounds; k.p calculations; light polarisation; self-assembly; semiconductor quantum dots; silicon compounds; valence bands; InGaAs-GaAs; SiGe-Ge; dot compositions; dot shapes; n-doped InAs-GaAs quantum dots; p-type SiGe-Ge self assembled dots; polarization dependent intersubband transitions; Capacitive sensors; Electromagnetic wave absorption; Gallium arsenide; Germanium silicon alloys; Indium gallium arsenide; Optical polarization; Quantum dots; Shape; Silicon germanium; US Department of Transportation;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354434
