DocumentCode :
1863054
Title :
Electron effective mass of Ga0.7In0.3NxAs1-x
Author :
Kondow, M. ; Fujisaki, S. ; Kitatani, T. ; Shirakata, S. ; Ikari, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
84
Lastpage :
89
Abstract :
The electron effective mass of GaInNAs is an important parameter for designing excellent long-wavelength lasers on GaAs. However, it has not yet been established. We find that it is 0.08±0.1 m0 (m0: mass of free electron) almost independent of nitrogen content from 0.3 to 1.5%.
Keywords :
III-V semiconductors; effective mass; gallium compounds; indium compounds; nitrogen compounds; radiative lifetimes; semiconductor quantum wells; Ga0.7In0.3NxAs1-x; GaInNAs-GaAs; electron effective mass; long-wavelength lasers; nitrogen content; Effective mass; Energy measurement; Free electron lasers; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical materials; Optical scattering; Plasma temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
Type :
conf
DOI :
10.1109/ISCSPC.2003.1354436
Filename :
1354436
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1863054
بازگشت