Application of nanoimprint lithography in nanoscale GaAs MSM photodetectors

Summary form only given. Nanoscale metal-semiconductor-metal (MSM) photodetectors and MESFETs are key elements in ultra-fast optical and wireless communication systems. However, devices with sub-0.25 /spl mu/m feature sizes are typically fabricated using electron-beam lithography (EEL), which has high cost and low throughput. Nanoimprint lithography (NIL), on the other hand, has both low cost and high throughput, as well as sub-l0 nm resolution. We report the fabrication of MSM photodetectors on semi-insulating (SI) GaAs using NIL, and the examination of NIL on the quality of the nanoscale Schottky contact. We found that if the imprint pressure is 600 psi or lower, nanoscale GaAs MSM photodetectors fabricated using NIL are comparable to those fabricated by conventional EEL and photolithography, indicating no degradation to the photodetector Schottky contact induced by the imprint process.