DocumentCode :
1863122
Title :
Impact of BEOL stress on BiCMOS9MW HBTs
Author :
Canderle, E. ; Chevalier, P. ; Avenier, G. ; Derrier, N. ; Celi, D. ; Gaquiere, Christopher
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2013
fDate :
Sept. 30 2013-Oct. 3 2013
Firstpage :
223
Lastpage :
226
Abstract :
Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase for the collector current, and a 21% and 12% increase for the transit frequencies fT and fMAX respectively.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; energy gap; heterojunction bipolar transistors; BEOL stress; BiCMOS9MW HBTs; STMicroelectronics BiCMOS9MW technology; SiGe; bandgap energy variation; denser dummies structure; electron volt energy 9.1 meV; metal connections impacts; transistor base bandgap; Equations; Integrated circuits; Metals; Photonic band gap; Silicon germanium; Strain; Stress; BiCMOS; SiGe HBT; back-end of line (BEOL); bandgap; stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
ISSN :
1088-9299
Print_ISBN :
978-1-4799-0126-5
Type :
conf
DOI :
10.1109/BCTM.2013.6798181
Filename :
6798181
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1863122
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