SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

Author

Camillo-Castillo, R.A. ; Liu, Q.Z. ; Adkisson, J.W. ; Khater, Marwan H. ; Gray, P.B. ; Jain, Vinesh ; Leidy, R.K. ; Pekarik, John J. ; Gambino, Jeffrey P. ; Zetterlund, B. ; Willets, C. ; Parrish, C. ; Engelmann, Sebastian U. ; Pyzyna, A.M. ; Cheng, Peng

Author_Institution

Microelectron. Div., IBM, Essex Junction, VT, USA

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

227

Lastpage

230

Abstract

Scaling both the f_T and the f_MAX of SiGe HBTs is quite challenging due to the opposing physical device requirements for improving these figures of merit. In this paper, millisecond anneal techniques, low temperature silicide and low temperature contact processes are shown to be effective in reducing the base resistance. These processes when combined with a novel approach to address the collector-base capacitance are shown to produce high performance SiGe HBT devices which demonstrate operating frequencies of 300/420GHz f_T/f_MAX. This is the first report of 90nm SiGe BICMOS with an f_MAX exceeding 400GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; annealing; capacitance; electric resistance; heterojunction bipolar transistors; low-temperature techniques; submillimetre wave integrated circuits; submillimetre wave transistors; BiCMOS technology; HBT; SiGe; base resistance; collector-base capacitance; frequency 300 GHz; frequency 420 GHz; heterojunction bipolar transistors; low temperature contact processes; low temperature silicide; millisecond anneal techniques; size 90 nm; BiCMOS integrated circuits; Capacitance; Nickel alloys; Performance evaluation; Resistance; Silicides; Silicon germanium; BiCMOS; Heterojunction Bipolar Transistors (HBT); Silicon Germanium (SiGe); base resistance; collector-base junction capacitance; millisecond anneal;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798182

Filename

6798182