DocumentCode
1863148
Title
Structural and magnetic properties of Er doped GaN
Author
Bang, Hyungjin ; Sawahata, Junji ; Tsunemi, Masato ; Yanagihara, Hideto ; Kita, Eiji ; Akimoto, Katsuhiro
Author_Institution
Inst. of Appl. Phys., Tsukuba Univ., Japan
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
108
Lastpage
113
Abstract
Structural and magnetic properties of Er-doped GaN film grown by molecular beam epitaxy (MBE) on sapphire substrates (0001) were studied. Magnetization measurements were carried out between -5 and 5 T of magnetic field and it is reasonably interpreted as predominant paramagnetic character for both samples. However, clear finite steps around zero fields were observed at all the range from 5 K to 300 K, suggesting the coexistence of ferromagnetic order.
Keywords
III-V semiconductors; erbium; ferromagnetic materials; gallium compounds; magnetisation; paramagnetic materials; semiconductor epitaxial layers; -5 to 5 T; 5 to 300 K; Al2O3; GaN:Er; MBE; ferromagnetic order coexistence; magnetic properties; magnetization; molecular beam epitaxy; paramagnetic sample; sapphire substrates; structural properties; Atomic measurements; Doping; Erbium; Gallium nitride; Magnetic films; Magnetic materials; Magnetic properties; Molecular beam epitaxial growth; Substrates; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN
0-7803-8614-0
Type
conf
DOI
10.1109/ISCSPC.2003.1354440
Filename
1354440
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