Title :
Lasing in free standing GaN hexagons
Author :
Herzog, W.D. ; Goldberg, B.B. ; Unlu, M.S. ; Singh, R. ; Dabkowski, F.P.
Author_Institution :
Dept. of Phys., Boston Univ., MA, USA
Abstract :
Summary form only given. We present analysis of the lasing characteristics of GaN hexagons fabricated by selective area growth hydride vapor phase epitaxy (SAG-HVPE). SAG-HVPE GaN hexagons are commercially important because of the low manufacturing cost and because they provide laser quality facets without etching or cleaving. We demonstrate optically pumped lasing and observe longitudinal cavity modes.
Keywords :
III-V semiconductors; gallium compounds; laser beams; laser cavity resonators; laser modes; optical fabrication; optical pumping; semiconductor lasers; stimulated emission; vapour phase epitaxial growth; GaN; fabrication; free standing GaN hexagons; free standing hexagons; laser quality facets; lasing; lasing characteristics; longitudinal cavity modes; low manufacturing cost; optically pumped lasing; selective area growth hydride vapor phase epitaxy; Absorption; Doping; Electron optics; Gallium nitride; Optical pumping; Quantum well devices; Radiative recombination; Stimulated emission; Substrates; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833937
