Title :
Numerical simulation and modeling of rear point contact solar cells
Author :
Zanuccoli, M. ; De Rose, R. ; Magnone, P. ; Frei, M. ; Guo, H.-W. ; Agrawal, M. ; Sangiorgi, E. ; Fiegna, C.
Author_Institution :
DEIS, Univ. of Bologna, Cesena, Italy
Abstract :
High efficiency silicon monocrystalline solar cells commonly adopt point contacted rear surfaces to reduce the recombination losses in the rear side of the device. However, the reduction of the rear contact surface leads to an increase of series resistance losses. Modeling and analysis of rear point contact solar cells is strategic to optimize the device design by taking into account several competing physical mechanisms. Owing to their complicated geometries, the analysis of these devices requires three-dimensional (3-D) numerical simulation. In this work we analyze the influence of the most important geometrical and electrical parameters on the conversion efficiency of rear point contact solar cells.
Keywords :
elemental semiconductors; numerical analysis; silicon; solar cells; Si; electrical parameters; geometrical parameters; monocrystalline solar cells; numerical modeling; rear point contact solar cells; recombination losses; series resistance losses; three-dimensional numerical simulation; Conductivity; Doping; Metallization; Numerical models; Photovoltaic cells; Semiconductor process modeling; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186248