Design of resonant tunneling permeable base transistors

We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics.