Title :
Quantum dots infrared photodetectors
Author :
Ye, Zhengmao ; Campbell, Joe C. ; Chen, Zhonghui ; Kim, Eui-Tae ; Madhukar, Anupam
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
We report a series of InAs quantum dots infrared photodetectors. By using InGaAs cap layers and InAIGaAs lateral potential confinement layers, the peak absorption can be manipulated in from ∼5.6 μm to ∼9 μm.
Keywords :
III-V semiconductors; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; 5.6 to 9 micron; InAlGaAs; InAs; InGaAs; absorption; cap layers; infrared photodetectors; lateral potential confinement layers; quantum dots; Gallium arsenide; Indium; Infrared detectors; Microelectronics; Molecular beam epitaxial growth; Photodetectors; Photoluminescence; Quantum dots; Stress; US Department of Transportation;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354452
