DocumentCode
1863472
Title
Breakdown effects on the performance and reliability of power MESFETs
Author
Shirokov, M.S. ; Leoni, R.E. ; Wei, C.J. ; Hwang, J.C.M.
Author_Institution
Lehigh Univ., Bethlehem, PA, USA
fYear
1996
fDate
3-6 Nov. 1996
Firstpage
34
Lastpage
37
Abstract
RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.
Keywords
III-V semiconductors; electric breakdown; gallium arsenide; power MESFET; semiconductor device models; semiconductor device reliability; GaAs; III-V semiconductors; RF breakdown effects; drive conditions; efficiency; large-signal MESFET model; linearity; match conditions; optimum bias; output power; power MESFETs; reliability; waveform measurements; Breakdown voltage; Current measurement; Electric breakdown; Gain; Gallium arsenide; MESFETs; Power generation; Power measurement; Predictive models; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location
Orlando, FL, USA
ISSN
1064-7775
Print_ISBN
0-7803-3504-X
Type
conf
DOI
10.1109/GAAS.1996.567631
Filename
567631
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