Title :
Measurement based nonlinear electrothermal modeling of GaAs FET with dynamical trapping effects
Author :
Ouarch, Z. ; Collantes, J.M. ; Teyssier, J.P. ; Quere, R.
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
This paper presents MESFET measurement methods based on pulsed measurements that separate trapping and thermal effects. Derived from these measurements, a model of the trapping effect is determined, as well as a thermal model. The proposed nonlinear model is validated from DC to RF frequencies, it handles dynamical dispersive effects and does not depend on the hot bias point.
Keywords :
gallium arsenide; GaAs; GaAs FET; MESFET measurement methods; dynamical dispersive effects; dynamical trapping effects; measurement based nonlinear modeling; nonlinear electrothermal modeling; pulsed measurements; thermal effects; thermal model; Electron traps; Electrothermal effects; FETs; Gallium arsenide; Isothermal processes; MESFETs; Performance evaluation; Pulse measurements; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705064
