• DocumentCode
    1863570
  • Title

    Comparison of GaSb p-n junction photodiodes fabricated using Cl2/Ar and Cl2/BCl3/CH4/Ar/H2 plasma

  • Author

    Bhagwat, Vinay ; Langer, J.P. ; Bhat, Ishwara ; Dutta, P.S. ; Refaat, Tamer ; Abedin, M. Nurul

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    220
  • Lastpage
    225
  • Abstract
    GaSb p-n junction mesa photodiodes were fabricated using plasma etching with chlorine/argon and an improved mixed gas recipe. The performance of the diodes is compared.
  • Keywords
    III-V semiconductors; gallium compounds; p-n junctions; photodiodes; sputter etching; Cl2/Ar plasma; Cl2/BCl3/CH4/Ar/H2 plasma; GaSb; mixed gas; p-n junction mesa photodiodes; plasma etching; Anisotropic magnetoresistance; Argon; Etching; P-n junctions; Photodiodes; Plasma applications; Plasma chemistry; Plasma devices; Polymer films; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
  • Print_ISBN
    0-7803-8614-0
  • Type

    conf

  • DOI
    10.1109/ISCSPC.2003.1354458
  • Filename
    1354458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1863570