Direct observation of localized high current effects in gallium arsenide field effect transistors

Author

Dugan, M.P.

Author_Institution

Anadigics Inc., Warren, NJ, USA

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

38

Lastpage

41

Abstract

High power GaAs integrated circuits operated at elevated temperatures display failure mechanisms which result from the high current densities through the FETs. Evidence of material growths or material accumulations on the drain contacts of high current FETs has been observed after the GaAs substrate material has been removed by chemical etching. These observations support the conclusion that these growths are responsible for end-of-life failures in the high current FETs.

Keywords

III-V semiconductors; current density; etching; failure analysis; field effect transistors; gallium arsenide; semiconductor device reliability; GaAs; III-V semiconductors; chemical etching; current densities; end-of-life failures; failure mechanisms; field effect transistors; localized high current effects; material accumulations; material growths; Chemicals; Crystalline materials; Crystallization; Current density; Etching; FET integrated circuits; Failure analysis; Gallium arsenide; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567632

Filename

567632