• DocumentCode
    1863912
  • Title

    Photoelectrochemical response for Cu-doped ZnIn2S4 electrode created using chemical bath deposition

  • Author

    Yu, Ya- Cian ; Liou, Ming-Zong ; Li, Wei-Che ; Cheng, Kong-Wei

  • Author_Institution
    Dept. of Chem. & Mater. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2010
  • fDate
    1-3 Aug. 2010
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    Polycrystalline Cu-doped ZnIn2S4 samples were grown on fluorine doped-tin-oxide-coated glass substrates using chemical bath deposition. The effect of [Cu]/[Cu+Zn] molar ratio in solution bath on the structural, optical and photoelectrochemical properties of the samples was investigated. From the results of X-ray diffraction (XRD) patterns of samples, a small shift in the peaks to a higher-angle was observed with the increase in Cu content in the film. The thicknesses and direct band gaps of the samples are in the ranges of 520-1260 nm and 2.51-2.09 eV, as obtained from surface profile measurement and transmittance/reflectance spectra, respectively. The highest photoelectrochemical response of samples was 1.15 mA/cm2 at an external potential of + 1.0 V vs. an Ag/AgCl electrode in 0.5 M K2SO4 solution under illumination using a 300W Xe lamp system with the light intensity set at 100 mW/cm2.
  • Keywords
    X-ray diffraction; copper; electrochemical electrodes; energy gap; indium compounds; light transmission; liquid phase deposition; photoelectrochemistry; reflectivity; semiconductor growth; semiconductor thin films; ternary semiconductors; zinc compounds; X-ray diffraction; XRD; ZnIn2S4:Cu; chemical bath deposition; direct band gaps; electrode photoelectrochemical response; glass substrates; polycrystalline samples; reflectance spectra; size 520 nm to 1260 nm; surface profile measurement; thin film; transmittance spectra; Chemistry; Copper; Electric potential; Electrodes; Hydrogen; Photonic band gap; Zinc; chemical synthesis; photocatalyst; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Chemistry and Chemical Engineering (ICCCE), 2010 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4244-7765-4
  • Electronic_ISBN
    978-1-4244-7766-1
  • Type

    conf

  • DOI
    10.1109/ICCCENG.2010.5560374
  • Filename
    5560374