Title :
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
Abstract :
Presents the front matter and table of contents from the conference proceedings.
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; field effect integrated circuits; field effect transistors; gallium arsenide; heterojunction bipolar transistors; optical communication; optoelectronic devices; power amplifiers; radiofrequency amplifiers; semiconductor device models; semiconductor device packaging; semiconductor device reliability; transceivers; 10 Gb/s optical communications; 40 Gb/s optical communications; GaAs IC; HBT amplifiers; HBT technologies; device modeling; device reliability; enabling technologies; low noise FET technology; multi-channel opto-electronics; next generation RF technologies; packaging; physical layer ICs; power amplifier; single-channel opto-electronics; transceiver components; wireless transceiver technologies;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964332
