Title :
A physically-based transient SPICE model for GaAs MESFET´s
Author :
Leoni, R.E., III ; Bao, J.W. ; Shirokov, M.S. ; Hwang, J.C.M.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
A physically-based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects hence can simultaneously simulate low-frequency dispersion and gate-lag characteristics. This is different from conventional models which can simulate either effect but not both. The present model was verified in terms of pulsed I-V characteristics and digitally-modulated RF carrier waveforms.
Keywords :
gallium arsenide; GaAs; GaAs MESFET; detrapping effects; digitally-modulated RF carrier waveforms; gate-lag characteristics; low-frequency dispersion; physically-based SPICE model; pulsed I-V characteristics; transient SPICE model; trapping effects; Digital modulation; Gallium arsenide; MESFETs; Pulse measurements; Pulse modulation; Radio frequency; SPICE; Steady-state; Transient response; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705066
