Title :
Slip defect generation on GaAs wafers during high temperature process: a thermoelastic study from a crystallographic viewpoint
Author :
Sawada, S. ; Yoshida, H. ; Kiyama, M. ; Mukai, H. ; Nakai, R. ; Takebe, T. ; Tatsumi, M. ; Kaji, M. ; Fujita, K.
Author_Institution :
Sumitomo Electr. Ind. Ltd., Osaka, Japan
Abstract :
In this work we investigate the mechanism of slip defect generation, using a simple heat flow simulation during an MBE process, a wafer heating apparatus, and a thermoelastic analysis from a crystallographic viewpoint. We find that the slip defect pattern predicted from the analysis agrees with the experiment and confirm that slip defects are prone to occur at orientation flat (OF) and notch edge.
Keywords :
III-V semiconductors; gallium arsenide; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; slip; temperature distribution; thermal stresses; thermoelasticity; GaAs; III-V semiconductors; MBE process; crystallography; heat flow simulation; high temperature process; notch edge; orientation flat; slip defect generation; thermoelastic study; wafer heating apparatus; Crystallography; Epitaxial growth; Gallium arsenide; Infrared heating; Molecular beam epitaxial growth; Semiconductor device modeling; Temperature; Thermal force; Thermal stresses; Thermoelasticity;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567635
