Title :
Acoustic band gap-enabled high-Q micro-mechanical resonators
Author :
Mohammadi, S. ; Eftekhar, A.A. ; Hunt, W.D. ; Adibi, A.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report high-quality factor (e.g., more than 6,000) silicon resonators operating at high frequencies (~130 MHz) based on phononic crystals which are a new class of materials with artificially-engineerable phononic (or acoustic) properties. The resonators use the complete acoustic (or phononic) band gap of the designed crystal and are fabricated using a CMOS-compatible micromachining technology. As it will be discussed in this paper, these proof-of-concept phononic crystal resonators show the great potential of phononic crystal structures for efficiently confining and manipulating mechanical energy at the micrometer and nanometer length scales to surpass the performance of the conventional micromechanical devices used in wireless communication and sensing systems.
Keywords :
CMOS integrated circuits; Q-factor; micromachining; micromechanical resonators; phononic crystals; silicon; CMOS compatible micromachining; Si; acoustic band gap; high quality factor; mechanical energy; micromechanical devices; micromechanical resonators; phononic crystal resonators; sensing systems; silicon resonators; wireless communication; Acoustic materials; CMOS technology; Crystalline materials; Crystals; Frequency; Mechanical energy; Micromachining; Nanoscale devices; Photonic band gap; Silicon; Phononic crystals; acoustic band gap; acoustic crystals; micromechanical resonators; phononic band gap;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285903
