Title :
A 12-channel 2.5 Gb/s receiver IC for parallel optical interconnect
Author :
Mayampurath, Balagopal ; Wu, Adam ; Armstrong, Allan
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
Abstract :
A 12-channel, 2.5 Gb/s, receiver IC for parallel optical interconnect is described. Each channel contains a Metal-Semiconductor-Metal Photodetector (MSM PD), Transimpedance Amplifier (TIA), Limiting Amplifier (LA), Output Buffer (OB) and Loss of Signal Detector (LOS). The chip was designed and fabricated in a 0.4 /spl mu/m GaAs MESFET process. Using a 3.3 V power supply, the chip typically consumes 600 mA, and each channel provides 400 mV differential outputs for input optical power more than -20 dBm. Typical single channel sensitivity is -19.5 dBm. Details of the chip design and layout and measured results are presented.
Keywords :
III-V semiconductors; MESFET integrated circuits; digital communication; gallium arsenide; integrated circuit design; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; optical receivers; photodetectors; 0.4 micron; 12-channel receiver; 2.5 Gbit/s; 3.3 V; 400 mV; 600 mA; GaAs MESFET process; MSM photodetector; chip design; chip layout; differential outputs; limiting amplifier; loss of signal detector; optical receiver IC; output buffer; parallel optical interconnect; transimpedance amplifier; Detectors; Gallium arsenide; Optical amplifiers; Optical buffering; Optical interconnections; Optical losses; Optical receivers; Photodetectors; Photonic integrated circuits; Signal detection;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964346
