Title :
Epitaxially-stacked multiple-active-region 1.55 /spl mu/m lasers for increased efficiency
Author :
Kim, J.K. ; Hall, E. ; Getty, J. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. Semiconductor lasers with optical efficiencies >1 have been created by monolithically connecting several active regions in series within a single optical waveguide. This is accomplished by epitaxially stacking a multiple of pin-MQW active regions with intermediate n/sup ++/-p/sup ++/ back-diodes which enable the entire terminal current to flow through each active region in series.
Keywords :
quantum well lasers; semiconductor laser arrays; semiconductor superlattices; 1.55 mum; efficiency; epitaxially-stacked multiple-active-region; intermediate back-diodes; lasers; optical efficiencies; pin-MQW active regions; semiconductor lasers; single optical waveguide; terminal current; Laser modes; Laser noise; Optical waveguides; Quantum cascade lasers; Semiconductor lasers; Stacking; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833996
