Title :
PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA
Author :
Hirayama, T. ; Matsuno, N. ; Fujii, M. ; Hida, H.
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We developed an InGaP/GaAs heterojunction bipolar transistor (HBT) two-stage power amplifier monolithic microwave integrated circuit (MMIC) for 1.95-GHz W-CDMA. In this MMIC, intermodulation distortion (IMD) cancellation between the driver- and final-stage HBTs occurs, so we can reduce an adjacent-leakage-power-ratio (ACPR) and enhance power-added efficiency (PAE) by balancing the bias currents for each stage. The MMIC has a high PAE of 44%, an output power of 26.0 dBm, and a gain of 27.9 dB with ACPR of -35 dBc at a 5-MHz offset frequency under a supply voltage of 3.6 V. This PAE represents state-of-the-art performance of HBT MMICs for W-CDMA.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; code division multiple access; gallium arsenide; gallium compounds; indium compounds; interference suppression; intermodulation distortion; 1.95 GHz; 27.9 dB; 3.6 V; 44 percent; 5-MHz offset frequency; ACPR; InGaP-GaAs; InGaP/GaAs HBT two-stage power amplifier MMIC; PAE enhancement; W-CDMA; adjacent-leakage power-ratio; bias currents balancing; driver HBTs; final-stage HBTs; intermodulation cancellation; intermodulation distortion cancellation; output power; state-of-the-art performance; supply voltage; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; Intermodulation distortion; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Multiaccess communication; Power amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964350
