PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA

Author

Hirayama, T. ; Matsuno, N. ; Fujii, M. ; Hida, H.

Author_Institution

Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

75

Lastpage

78

Abstract

We developed an InGaP/GaAs heterojunction bipolar transistor (HBT) two-stage power amplifier monolithic microwave integrated circuit (MMIC) for 1.95-GHz W-CDMA. In this MMIC, intermodulation distortion (IMD) cancellation between the driver- and final-stage HBTs occurs, so we can reduce an adjacent-leakage-power-ratio (ACPR) and enhance power-added efficiency (PAE) by balancing the bias currents for each stage. The MMIC has a high PAE of 44%, an output power of 26.0 dBm, and a gain of 27.9 dB with ACPR of -35 dBc at a 5-MHz offset frequency under a supply voltage of 3.6 V. This PAE represents state-of-the-art performance of HBT MMICs for W-CDMA.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; code division multiple access; gallium arsenide; gallium compounds; indium compounds; interference suppression; intermodulation distortion; 1.95 GHz; 27.9 dB; 3.6 V; 44 percent; 5-MHz offset frequency; ACPR; InGaP-GaAs; InGaP/GaAs HBT two-stage power amplifier MMIC; PAE enhancement; W-CDMA; adjacent-leakage power-ratio; bias currents balancing; driver HBTs; final-stage HBTs; intermodulation cancellation; intermodulation distortion cancellation; output power; state-of-the-art performance; supply voltage; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; Intermodulation distortion; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Multiaccess communication; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964350

Filename

964350