60GHz-band high-gain MMIC cascode HBT amplifier

Author

Tanaka, H. ; Suematsu, E. ; Handa, S. ; Motouchi, Y. ; Takahashi, N. ; Yamada, A. ; Matsumoto, N. ; Sato, H.

Author_Institution

Adv. Technol. Res. Labs., Sharp Corp., Nara, Japan

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

79

Lastpage

82

Abstract

In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm/spl times/1.3mm size shows a gain of 20dB in the 60GHz-band.

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 20 dB; 60 GHz; InGaP-GaAs; InGaP/GaAs HBT; MMIC cascode amplifier; common-base HBT; common-emitter HBT; high-gain small-size amplifier; open-ended stub; virtual grounding technique; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MMICs; MODFETs; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Power generation; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964351

Filename

964351