Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz

Author

Urteaga, M. ; Scott, D. ; Mathew, T. ; Krishnan, S. ; Wei, Y. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

83

Lastpage

87

Abstract

We report a single-stage tuned amplifier that exhibits a peak small signal gain of 6.3 dB at 175 GHz. The amplifier was designed in a transferred-substrate InP-based HBT technology that has exhibited record values of extrapolated f/sub max/. The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MIMIC; circuit tuning; gallium arsenide; heterojunction bipolar transistors; indium compounds; 175 GHz; 6.3 dB; InAlAs-InGaAs; InAlAs/InGaAs HBT layer structure; InP; S-parameters; gain-per-stage; maximum stable gain; peak small signal gain; short circuit current gain; single-stage G-band HBT amplifier; single-stage tuned amplifier; transferred-substrate InP-based HBT technology; ultra-low parasitic transferred-substrate HBT technology; unilateral power gain; Broadband amplifiers; Frequency; Gain; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Power amplifiers; Radiofrequency amplifiers; Submillimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964352

Filename

964352