DocumentCode :
1864536
Title :
Clock and data recovery IC for 40 Gb/s fiber-optic receiver
Author :
Georgiou, G. ; Baeyens, Y. ; Chen, Y.-K. ; Groepper, C. ; Paschke, P. ; Pullela, R. ; Reinhold, M. ; Dorschky, C. ; Mattia, J.P. ; von Mohrenfels, T.W. ; Schulien, C.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fYear :
2001
fDate :
21-24 Oct. 2001
Firstpage :
93
Lastpage :
96
Abstract :
The integrated clock data recovery (CDR) circuit is a key element for broad band optical communication systems at 40 Gb/s. We report a 40Gb/s CDR fabricated in Indium-Phosphide heterojunction bipolar transistor (InP HBT) technology using the more robust architecture of a phase lock loop with a digital early-late phase detector. The faster (compared to SiGe) InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This in turn reduces the circuit complexity (transistor count) and VCO requirements. The integrated IC includes an on-chip LC VCO and on-chip clock dividers to drive an external DEMUX and low frequency PLL control loop. On-chip limiting amplifier buffers are included for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed signal IC operating at the clock rate of 40 GHz. We describe the chip architecture and measurement results.
Keywords :
III-V semiconductors; bipolar integrated circuits; clocks; decision circuits; high-speed integrated circuits; indium compounds; integrated circuit design; integrated circuit measurement; mixed analogue-digital integrated circuits; optical receivers; phase detectors; phase locked loops; 40 Gb/s fiber-optic receiver; 40 Gbit/s; InP; InP HBT technology; VCO requirements; broad band optical communication systems; chip architecture; circuit complexity; clock data recovery circuit; clock rate; digital early-late phase detector; external DEMUX; low frequency PLL control loop; mixed signal IC; on-chip LC VCO; on-chip clock dividers; on-chip limiting amplifier buffers; phase lock loop; Clocks; Detectors; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Optical fiber communication; Optical receivers; Phase detection; Robustness; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-6663-8
Type :
conf
DOI :
10.1109/GAAS.2001.964354
Filename :
964354
Link To Document :
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