A 3.5 GHz fully integrated power amplifier module

Author

Blount, P. ; Cuggino, J. ; McPhee, J.

Author_Institution

Hittite Microwave Corp., Chelmsford, MA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

111

Lastpage

114

Abstract

In this paper we present a state-of-the-art Power Amplifier module operating at S-band. The power module consists of an InGaP HBT MMIC amplifier at 3.5 GHz with the necessary bias and output matching networks integrated using standard surface mount components. As such the module is truly 50 /spl Omega/ matched at input and output ports with no external circuitry required. The technology chosen for the module is a low cost, high volume ball grid array (BGA) technology, which is widely available. The power module gave a peak output power of 27.5 dBm and a power added efficiency of 44% from a single +5 V supply.

Keywords

III-V semiconductors; MMIC power amplifiers; ball grid arrays; bipolar MMIC; gallium compounds; heterojunction bipolar transistors; impedance matching; indium compounds; integrated circuit packaging; modules; surface mount technology; 3.5 GHz; 44 percent; 5 V; 50 ohm; InGaP; InGaP HBT MMIC amplifier; S-band; ball grid array technology; bias network; fully integrated power amplifier module; output matching network; surface mount component; Capacitors; Costs; Heterojunction bipolar transistors; Impedance matching; Integrated circuit technology; MMICs; Multichip modules; Packaging; Power amplifiers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964358

Filename

964358