Extremely high P1dB MMIC amplifiers for Ka-band applications

Author

Lai, R. ; Grundbacher, R. ; Barsky, M. ; Oki, A. ; Siddiqui, M. ; Pitman, B. ; Katz, R. ; Tran, P. ; Callejo, L. ; Streit, D.

Author_Institution

Semicond. Products Center, TRW Inc., Redondo Beach, CA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

115

Lastpage

117

Abstract

In this paper we describe single stage and two-stage MMIC power amplifier data at Ka-band. An extremely high P1dB power density of 700 mW/mm and 571 mW/mm were measured for the 1-stage and 2-stage GaAs HEMT MMIC amplifiers respectively. When biased for optimal IP3, 4.5 W/mm and 2.1 W/mm were achieved respectively. The performance of the latter 2-stage MMIC PA is achieved in a very compact design of 4.08 mm/sup 2/ total MMIC area. These are believed to be among the best numbers reported for linear power amplifiers at Ka-band.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; 0.15 micron; 24 to 30 GHz; GaAs; GaAs HEMT power amplifier; Ka-band applications; MMIC power amplifiers; P1dB power density; compact design; linear power amplifiers; optimal IP3 biasing; power amplifier performance; single stage power amplifier; two-stage power amplifier; Chirp modulation; Cutoff frequency; Gallium arsenide; HEMTs; High power amplifiers; Linearity; MMICs; Power amplifiers; Power generation; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964359

Filename

964359