• DocumentCode
    1864751
  • Title

    40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT

  • Author

    Kurdoghlian, A. ; Mokhtari, M. ; Fields, C.H. ; Wetzel, M. ; Sokolich, M. ; Micovic, M. ; Thomas, S., III ; Shi, B. ; Sawins, M.

  • Author_Institution
    LLC, HRL Laboratories, Malibu, CA, USA
  • fYear
    2001
  • fDate
    21-24 Oct. 2001
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    A fully integrated and differential AlInAs/InGaAs HBT voltage controlled oscillator (VCO) with wide tuning range was demonstrated for 40 GHz wireless and optical communication applications. To our knowledge, this 40 GHz IC is the highest frequency fundamental mode fully integrated and differential VCO with wide tuning range ever reported. This VCO delivers a typical differential output power of +5 dBm at a center frequency of 39 GHz with a tuning range of up to 3.5 GHz. Co-planar waveguide (CPW) circuit designs has been employed for the development of the InP HBT MMIC VCOs to reduce chip cost and make them flip chip compatible. The measured phase noise shows -95 dBc/Hz at 1 MHz offset and -75 dBc/Hz at 100 KHz offset. The VCO was realized in a high yield optical lithography triple mesa HBT process. Circuit performance was relatively insensitive to process variation indicating a highly robust circuit design and process.
  • Keywords
    III-V semiconductors; MMIC oscillators; aluminium compounds; bipolar MMIC; circuit tuning; coplanar waveguide components; flip-chip devices; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; photolithography; voltage-controlled oscillators; 40 GHz; AlInAs-InGaAs; AlInAs/InGaAs HBT MMIC VCO; InP; InP substrate; center frequency; coplanar waveguide circuit; flip-chip technology; fully integrated differential monolithic voltage controlled oscillator; fundamental mode; optical communication; optical lithography; output power; phase noise; triple mesa process; tuning range; wireless communication; Circuit optimization; Circuit synthesis; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Optical fiber communication; Optical tuning; Power generation; Voltage-controlled oscillators; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-6663-8
  • Type

    conf

  • DOI
    10.1109/GAAS.2001.964362
  • Filename
    964362