Title :
A DC-45 GHz metamorphic HEMT traveling wave amplifier
Author :
Leoni, R.E., III ; Lichwala, S.J. ; Hunt, J.G. ; Whelan, C.S. ; Marsh, P.F. ; Hoke, W.E. ; Kazior, T.E.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
Metamorphic HEMT (MHEMT) technology is capable of providing InP based HEMT performance at GaAs based HEMT levels of manufacturability and cost. This makes the MHEMT an attractive alternative for low noise, high frequency, and wide bandwidth applications. The authors describe the performance of a DC-45 GHz MHEMT traveling wave amplifier (TWA) that is well suited for broadband applications such as 40 Gb/s fiber-optic receivers. The amplifier provides a typical noise figure of 2 dB and output powers in excess of 3 dBm.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; indium compounds; optical receivers; travelling wave amplifiers; wideband amplifiers; 0 to 45 GHz; 16 dB; 2 to 2.5 dB; 40 Gbit/s; 45 GHz; GaAs; InGaAs; InGaAs MHEMT technology; MHEMT TWA; MHEMT traveling wave amplifier; broadband applications; fiber-optic receivers; metamorphic HEMT; wide bandwidth applications; Bandwidth; Broadband amplifiers; Costs; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Manufacturing; Power amplifiers; mHEMTs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964363
