Title :
45 GHz distributed amplifier with a linear 6-Vp-p output for a 40 Gb/s LiNbO/sub 3/ modulator driver circuit
Author :
Shigematsu, H. ; Yoshida, N. ; Sato, M. ; Hara, N. ; Hirose, T. ; Watanabe, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We developed a coplanar waveguided-type distributed amplifier for a LiNbO/sub 3/ modulator driver (LN driver) using double-doped AlGaAs/InGaAs/AlGaAs-pseudomorphic High Electron Mobility Transistors (p-HEMTs). By using a stabilization and impedance control technique, we obtained a 45 GHz bandwidth for coplanar waveguided (CPW) lines with a 600 /spl mu/m thick substrate and 54 GHz bandwidth for grounded coplanar waveguided (GCPW) lines with a 75 /spl mu/m thick substrate, and a linear 6-Vp-p output at 40 Gb/s. These results indicate that our circuit design technique is suitable for use in fiber-optic communication systems.
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; coplanar waveguide components; distributed amplifiers; driver circuits; electro-optical modulation; gallium arsenide; indium compounds; lithium compounds; optical communication equipment; optical fibre communication; 40 Gbit/s; 45 GHz; 54 GHz; 6 V; AlGaAs-InGaAs-AlGaAs; LiNbO/sub 3/; LiNbO/sub 3/ modulator driver circuit; bandwidth; circuit design; distributed amplifier; double-doped AlGaAs/InGaAs/AlGaAs p-HEMT; fiber-optic communication system; grounded coplanar waveguided line; impedance control; linear output; stabilization; Bandwidth; Circuit synthesis; Coplanar waveguides; Distributed amplifiers; Driver circuits; HEMTs; Impedance; Indium gallium arsenide; MODFETs; Thickness control;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964364
