A Multi-Terminal Pressure Sensor with enhanced sensitivity

Author

Coraucci, G.O. ; Finardi, M.R. ; Fruett, F.

Author_Institution

Center for Semicond. Components (CCS), Univ. of Campinas (Unicamp), Campinas, Brazil

fYear

2009

fDate

21-25 June 2009

Firstpage

1122

Lastpage

1125

Abstract

This paper describes the design, microfabrication and characterization of a CMOS compatible multi-terminal pressure sensor (MTPS). This sensor is an alternative to the pressure sensors based on the conventional silicon Wheatstone piezoresistive bridge (WB) or four-terminal piezotransducers. The layout of the MTPS is designed in such a way that the sensor sensitivity is effectively improved and the short-circuit effects, which are modeled by the geometrical correction factor (G), can be minimized. The sensor design was supported by finite element method (FEM). The MTPS sensitivity amounts to 4,8 mV/psi.

Keywords

CMOS integrated circuits; finite element analysis; microfabrication; pressure sensors; CMOS compatible multiterminal pressure sensor; FEM; Wheatstone piezoresistive bridge; finite element method; four-terminal piezotransducers; geometrical correction factor; microfabrication; pressure sensors; sensor sensitivity; short-circuit effects; Biomembranes; Conductivity; Current density; Geometry; Mechanical sensors; Piezoresistance; Sensor phenomena and characterization; Silicon; Stress; Voltage; CMOS Microsystem; Pressure sensor; high sensitivity; microelectronic; piezoresistive effect; short-circuit effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285927

Filename

5285927