Evaluation of 4" InP(Fe) substrates for production of HBTs

Author

Clark, D.A.

Author_Institution

Nortel Networks Opt. Components, Ottawa, Ont., Canada

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

181

Lastpage

184

Abstract

Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.

Keywords

III-V semiconductors; crystal growth from melt; crystal orientation; doping profiles; electrical resistivity; heterojunction bipolar transistors; indium compounds; iron; semiconductor growth; substrates; surface topography; 4 in; EPD; HBT production; HBTs; InP(Fe) substrates; InP:Fe; VGF; cellular telecommunication systems; digital wireless systems; fiber optic telecommunication systems; heterojunction bipolar transistors; large-scale fabrication; liquid encapsulated Czochralski growth; pressure controlled LEC growth; resistivity; semi-insulating InP(Fe) substrate crystals; specifications; substrate flatness; substrate orientation; substrate thickness; vertical gradient freeze; Conductivity; Crystals; Heterojunction bipolar transistors; Impurities; Indium phosphide; Iron; Manufacturing; Photoluminescence; Production; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964373

Filename

964373