Title :
Low noise, high-speed InP/InGaAs HBTs
Author :
Hsu, Shawn S. H. ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
High frequency noise characteristics of InP/InGaAs HBTs with various emitter geometries were investigated. A minimum noise figure (F/sub min/) of 1.51 dB and associated gain (G/sub a/) of 9.6 dB at a frequency of 10 GHz and a DC power consumption of only 1.6 mW (V/sub CE/ = 1.6 V, I/sub C/ = 1 mA) at 10 GHz were obtained. The dependence of noise characteristics on bias and geometry is also reported. The dominant noise sources in these HBTs were analyzed and an optimum emitter area of 1.2 /spl times/ 20 /spl mu/m/sup 2/ was found to present minimum noise figure and equivalent noise resistance.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; microwave bipolar transistors; semiconductor device noise; 1 mA; 1.51 dB; 1.6 V; 1.6 mW; 10 GHz; 9.6 dB; DC power consumption; InP-InGaAs; InP/InGaAs HBT; associated gain; bias dependence; device geometry; emitter area; equivalent noise resistance; high-frequency noise; low-noise high-speed operation; minimum noise figure; Circuit noise; Energy consumption; Frequency; Geometry; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Noise figure; Noise measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964375
