• DocumentCode
    1865073
  • Title

    Asymemetry in intermodulation distortion of HBT power amplifiers

  • Author

    Yu Wang ; Cherepko, S.V. ; Hwang, J.C.M. ; Feiyu Wang ; Jemison, W.D.

  • Author_Institution
    Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2001
  • fDate
    21-24 Oct. 2001
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    This work demonstrates the prediction of asymmetry in intermodulation distortion of HBT power amplifiers under two-tone excitation. While previous predictions were based on Volterra series in conjunction with a simple device model, the present approach is based on harmonic-balance simulation in conjunction with a nonlinear large-signal device model. The present approach is validated by the agreement between simulations and measurements under different bias, matching and input conditions as well as tone separations. The present result is consistent with the Volterra-series analysis of the effect of baseband termination impedance on the intermodulation asymmetry.
  • Keywords
    UHF power amplifiers; heterojunction bipolar transistors; intermodulation distortion; nonlinear network analysis; semiconductor device models; HBT power amplifiers; IMD asymmetry; VBIC HBT model; baseband termination impedance; bias conditions; harmonic-balance simulation; input conditions; intermodulation distortion; matching conditions; nonlinear large-signal device model; tone separations; two-tone excitation; Circuit simulation; Distortion measurement; Educational institutions; Electronic mail; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Intermodulation distortion; Power amplifiers; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-6663-8
  • Type

    conf

  • DOI
    10.1109/GAAS.2001.964378
  • Filename
    964378