• DocumentCode
    1865077
  • Title

    Thin film diffusion barrier formation in PDMS microcavities

  • Author

    Riaz, Asif ; Gandhiraman, Ram P. ; Dimov, Ivan K. ; Basabe-Desmonts, Lourdes ; Ricco, Antonio J. ; Ducrée, Jens ; Daniels, Stephen ; Lee, Luke P.

  • Author_Institution
    Nat. Centre for Sensor Res., Dublin City Univ., Dublin, Ireland
  • fYear
    2009
  • fDate
    21-25 June 2009
  • Firstpage
    1051
  • Lastpage
    1054
  • Abstract
    We describe a method to form glass like thin film barrier in polydimethylsiloxane (PDMS) microcavities. The reactive fragments for the surface reaction were created from O2 and hexamethyldisiloxane (HMDS) in RF plasma environment. The reaction is based on migration of the reactive fragments into the microcavities by diffusion, to form a glass like thin film barrier to conceal the naked surface of PDMS. The barrier successfully blocked penetration of a fluorescent dye rhodamine B (RhB) into PDMS. The thickness of the barrier could be controlled by the time of reaction and the pressure inside the reaction chamber. There is a wide range of applications of such a technique in various fields, e.g. for coating the covered surfaces of microfluidic channels, tubes, capillaries, medical devices, catheters, as well as chip-integrated capillary electrophoresis and advanced electronic and opto-fluidic packaging.
  • Keywords
    diffusion barriers; dyes; glass; microcavities; microfluidics; plasma materials processing; polymers; surface chemistry; thin films; PDMS microcavities; RF plasma environment; barrier thickness; fluorescent dye rhodamine B; glass like thin film barrier; hexamethyldisiloxane; microfluidics; polydimethylsiloxane microcavities; reactive fragment migration; surface reaction; thin film diffusion barrier formation; Coatings; Fluorescence; Glass; Microcavities; Microfluidics; Plasma applications; Pressure control; Radio frequency; Thickness control; Transistors; Polydimethylsiloxane; diffusion barrier; hexamethyldisiloxane; microfluidics; plasma enhanced vapor deposition;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    978-1-4244-4190-7
  • Electronic_ISBN
    978-1-4244-4193-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2009.5285939
  • Filename
    5285939