Title :
A monolithic X-band class-E power amplifier
Author_Institution :
Raytheon Electron. Syst., El Segundo, CA, USA
Abstract :
This paper describes what is believed to be the first successful design and fabrication of a broadband monolithic high efficiency class-E driver amplifier that operates at X-band and employs a 0.3 /spl mu/m /spl times/600 /spl mu/m pHEMT device. The amplifier´s measured performance shows a peak Power Added Efficiency (PAE) of 63% at 10.6 GHz and a constant output power of greater than 24 dBm together with a gain of 10 dB over 9-11 GHz.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit design; switching circuits; wideband amplifiers; 0.3 micron; 10 dB; 600 micron; 63 percent; 9 to 11 GHz; MMIC amplifier chip; PHEMT device; X-band power amplifier; broadband amplifier; design methodology; high efficiency class-E amplifier; high power microwave amplifiers; monolithic driver amplifier; Broadband amplifiers; Circuit topology; Costs; Design methodology; Frequency; PHEMTs; Power amplifiers; Radiofrequency amplifiers; Switches; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964379
