• DocumentCode
    1865154
  • Title

    Prediction of strength and fatigue lifetime of MEMS structures with arbitrary shapes

  • Author

    Kawai, T. ; Gaspar, J. ; Paul, O. ; Kamiya, S.

  • Author_Institution
    Nagoya Inst. Technol., Nagoya, Japan
  • fYear
    2009
  • fDate
    21-25 June 2009
  • Firstpage
    1067
  • Lastpage
    1070
  • Abstract
    Strength and fatigue lifetime of polycrystalline silicon thin films with notches were successfully predicted from the information obtained from reference specimens with uniform stress distribution. The initial damage, which was induced by patterning process and supposed to be independent of specimen shapes, was characterized as an equivalent crack distribution from the strength distribution of reference specimens. Static strength of notched specimens was then estimated from a statistical point of view with stress distribution taken into account. Fatigue lifetime was estimated on the basis of fatigue crack extension process described by Paris´ law, with the two parameters obtained from uniform stress specimens in the previous study as material inherent constants.
  • Keywords
    elemental semiconductors; fatigue cracks; micromechanical devices; notch strength; reliability; semiconductor thin films; silicon; statistical distributions; stress effects; MEMS structures; Paris law; Si; arbitrary shapes; equivalent crack distribution; fatigue crack extension process; fatigue lifetime; notched specimens; patterning process; polycrystalline silicon thin films; reliability; static strength; statistical distribution; uniform stress distribution; Etching; Fatigue; Life estimation; Lifetime estimation; Micromechanical devices; Shape; Silicon; Springs; Stress; Testing; Crack extension; Design for reliability; Fatigue; Paris´ law; Polysilicon; Strength; Weibull distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    978-1-4244-4190-7
  • Electronic_ISBN
    978-1-4244-4193-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2009.5285943
  • Filename
    5285943