Title :
Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics
Author :
Hsu, Shawn S. H. ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at 8.4 GHz at the same bias condition. In addition, a maximum breakdown voltage (V/sub BD/) of /spl sim/115 V at I/sub D/=20 /spl mu/A and I/sub G//spl sim/30 /spl mu/A was measured. A MODFET noise model and its correlation with gate leakage current are also investigated.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; semiconductor device models; semiconductor device noise; wide band gap semiconductors; 1.9 dB; 10 GHz; 115 V; 16.2 dB; 21.9 percent; 30 mA; 8.4 GHz; AlGaN-GaN; AlGaN/GaN MODFETs; MODFET noise model; equivalent circuit model; gate leakage current; high breakdown characteristics; low noise characteristics; microwave characteristics; power characteristics; Aluminum gallium nitride; Circuit noise; Cutoff frequency; Electric breakdown; Gain; Gallium nitride; HEMTs; Leakage current; MODFET circuits; Noise figure;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964384
