DocumentCode :
1865207
Title :
Large-area, epitaxial lift-off, inverted metamorphic solar cells
Author :
Tatavarti, R. ; Wibowo, A. ; Elarde, V. ; Tuminello, F. ; Pastor, R. ; Giannopoulos, T. ; Osowski, M. ; Chan, R. ; Youtsey, C. ; Hillier, G. ; Pan, N.
Author_Institution :
MicroLink Devices Inc., Niles, IL, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Large area (20 cm2) epitaxial lifted-off (ELO) triple junction (TJ) solar cells based on inverted metamorphic (IMM) InGaP/GaAs/InGaAs were fabricated. These TJ IMM ELO solar cells exhibited efficiency >;29% at one sun AMO illumination, which is the highest reported efficiency for IMM ELO thin cells to date. The cells had fill factor >;85%, open circuit voltage (Voc) = 2.93 V, and short circuit current density (Jsc) = 16.3 mA/cm2. Studies performed on IMM ELO solar cells after >;700 thermal cycles between -175 °C and 80 °C revealed no degradation in cell performance. Batches of up to 48 substrates were subjected to reclaim after the ELO process; no degradation in performance was noted between cells grown on prime and reclaimed substrates.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; solar cells; InGaP-GaAs-InGaAs; TJ IMM ELO solar cell; epitaxial lift-off triple-junction solar cell; fill factor; inverted metamorphic solar cell; large-area solar cell; open-circuit voltage; short-circuit current density; sun AMO illumination; voltage 2.93 V; Current measurement; Degradation; Extraterrestrial measurements; Gallium arsenide; Lighting; Photovoltaic cells; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186333
Filename :
6186333
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1865207
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