Title :
Ohmic contacts on n-type polycrystalline silicon carbide with Ti/TaSi2/Pt
Author :
Jin, S. ; Fu, X.A. ; Mehregany, M.
Author_Institution :
Mater. Sci. & Eng., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
We report a thermodynamically-stable Ti/TaSi2/Pt Ohmic contact on n-type, heavily-nitrogen-doped low-pressure chemical vapor deposited polycrystalline 3C-silicon carbide; this Ohmic contact metallization is suitable for stable high temperature operation. The contact shows excellent linearity and has a specific contact resistance (SCR) as low as 2times10-5 Omega-cm2, directly after sequential sputtering of 100 nm of Ti, 400 nm of TaSi2 and 200 nm of Pt. The SCR of the metallization following a 20-mins anneal in nitrogen ambient at 600degC decreases to 3.9times10-6 Omega-cm2. The contact remains Ohmic throughout 1000 hours of aging in air at 550degC. Auger electron spectroscopy has been used to analyze the metal/semiconductor interface to understand the prevailing reactions in this metal-semiconductor contact.
Keywords :
Auger electron spectra; annealing; chemical vapour deposition; contact resistance; metallisation; nitrogen; ohmic contacts; platinum; semiconductor-metal boundaries; silicon alloys; silicon compounds; tantalum alloys; titanium; Auger electron spectroscopy; Ti-TaSi2-Pt-SiC:N; aging; air; annealing; heavily nitrogen doped polycrystalline 3C-silicon carbide; low-pressure chemical vapor deposition; metal-semiconductor contact; metal-semiconductor interface; n-type polycrystalline silicon carbide; ohmic contact metallization; sequential sputtering; size 100 nm to 400 nm; specific contact resistance; temperature 550 degC to 600 degC; thermodynamically-stable ohmic contact; time 20 min; Annealing; Chemicals; Contact resistance; Linearity; Metallization; Ohmic contacts; Silicon carbide; Sputtering; Temperature; Thyristors; Ohmic contact; platinum; silicon carbide; tantalum silicide; titanium;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285947
