DocumentCode :
1865239
Title :
Temperature-dependent small-signal and power and noise characterization of GaAs power FETs
Author :
Gebara, E. ; Nuttinck, S. ; Murti, M.R. ; Heo, D. ; Harris, M. ; Laskar, J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2001
fDate :
21-24 Oct. 2001
Firstpage :
233
Lastpage :
236
Abstract :
We present a complete on-wafer characterization of a GaAs power MESFET (L/sub g/=0.6 /spl mu/m, W/sub g/=300 /spl mu/m) at various temperature of operation. DC-IV, small-signal, power and noise parameters measurements are achieved at temperatures from 18 K to 300 K. The transition between small-signal and large-signal mode of operation is studied, highlighting the importance of load-pull measurements, and the caution that must be considered when applying small-signal results to large-signal mode of operation. Power measurements were achieved at an optimal bias condition to take into account the positive Temperature Coefficient (TC) that the On Breakdown Voltage exhibits. Results demonstrate performance improvements, when the device operates at reduced lattice temperature, in output power, power-added efficiency, intermodulation products and noise parameters. This analysis technique provides a path for developing robust temperature dependent large-signal models.
Keywords :
III-V semiconductors; cryogenic electronics; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device measurement; semiconductor device noise; 0.6 micron; 18 to 300 K; 300 micron; DC characteristics; GaAs power MESFET; intermodulation products; load-pull measurements; microwave characteristics; noise characterization; noise parameters; on breakdown voltage; on-wafer characterization; optimal bias condition; output power; positive temperature coefficient; power characterization; power-added efficiency; reduced lattice temperature operation; small-signal characterization; small-signal/large-signal mode transition; temperature-dependent characterization; FETs; Gallium arsenide; MESFETs; Noise measurement; Power amplifiers; Power generation; Power measurement; Radar applications; Semiconductor device noise; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-6663-8
Type :
conf
DOI :
10.1109/GAAS.2001.964385
Filename :
964385
Link To Document :
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