InP and GaAs components for 40 Gbps applications

Author

Streit, D. ; Lai, R. ; Gutierrez-Aitken, A. ; Siddiqui, M. ; Allen, B. ; Chau, A. ; Beale, W. ; Oki, A.

Author_Institution

Velocium, El Segundo, CA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

247

Lastpage

250

Abstract

We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.

Keywords

HEMT integrated circuits; III-V semiconductors; bipolar integrated circuits; digital communication; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit reliability; integrated optoelectronics; optical communication equipment; p-i-n photodiodes; photodetectors; wideband amplifiers; 40 Gbit/s; DHBT TIAs; DHBT digital circuits; GaAs; GaAs components; HEMT modulator drivers; InP; InP components; PHEMT distributed amplifier; double heterojunction bipolar transistors; dual-absorption PIN diodes; high responsivity PIN diodes; monolithically integrated PIN-TIA circuits; transimpedance amplifiers; Bandwidth; Distributed amplifiers; Driver circuits; Gain; Gallium arsenide; HEMTs; Indium phosphide; Optical amplifiers; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964387

Filename

964387