DocumentCode :
1865323
Title :
Suspended microstructures made using silicon migration
Author :
Kant, R. ; Ziaei-Moayyed, M. ; Howe, R.T.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
1091
Lastpage :
1094
Abstract :
We demonstrate a new approach for large area releases in single crystal silicon without the use of traditional undercutting-based etches. Our approach uses silicon migration to create suspended microstructures by transforming periodic array of trenches into a continuous void under the silicon surface. We show close agreement between simulation of the silicon migration phenomenon and fabrication results, and demonstrate the viability for creating large released microstructures and micro-fluidic devices.
Keywords :
crystal microstructure; elemental semiconductors; microfluidics; silicon; voids (solid); Si; continuous void; microfluidic devices; migration phenomenon; suspended microstructures; transforming periodic array; undercutting-based etches; Annealing; Biomembranes; Etching; Fabrication; Hydrogen; Microstructure; Resists; Shape; Silicon; Vents; large area release; silicon migration; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285949
Filename :
5285949
Link To Document :
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