Title :
Metamorphic PIN photodiodes for the 40 Gb/s fiber market
Author :
Whelan, C.S. ; Marsh, P.F. ; Leoni, R.E., III ; Hunt, J. ; Grigas, M. ; Hoke, W.E. ; Hwang, K.C. ; Kazior, T.E. ; Joshi, A.M. ; Wang, X.
Abstract :
High-speed metamorphic PIN diodes that absorb at 1.55 /spl mu/m wavelength light were fabricated on a GaAs substrate. The In/sub 0.53/Ga/sub 0.47/As-based top-illuminated structure showed a low, stable dark current of 7 nA at 10 V reverse bias. The packaged diode demonstrated a -3 dB bandwidth of 52 GHz and 0.52 A/W responsivity. This state-of-the-art diode fabricated on a highly manufacturable GaAs substrate is clearly suitable for the 40 Gbit/s fiber optic telecommunication market, and opens the door for metamorphic OEICs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; p-i-n photodiodes; 1.55 micron; 10 V; 40 Gbit/s; 52 GHz; 7 nA; GaAs; GaAs substrate; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As top-illuminated structure; bandwidth; dark current; fiber optic telecommunication; high-speed metamorphic PIN photodiode; metamorphic OEIC; packaged diode; responsivity; Anodes; Bandwidth; Costs; Diodes; Gallium arsenide; Indium phosphide; PIN photodiodes; Parasitic capacitance; Substrates; mHEMTs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964388
