Influence of annealing on Co-doped ZnO DMSs thin films synthesized by nanocluster-beam technique

Author

Zhiwei Zhao ; Xuehua Li

Author_Institution

Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

Co-doped ZnO thin films fabricated by nanocluster-beam technique were annealed at 200, 400 and 700°C and the influence of temperature has been investigated. AFM images and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films was also studied following the changing of annealing temperatures.

Keywords

II-VI semiconductors; annealing; atomic force microscopy; cobalt; ferromagnetic materials; magnetic semiconductors; magnetic thin films; magnetisation; semiconductor growth; semiconductor thin films; ultraviolet spectra; wide band gap semiconductors; zinc compounds; AFM images; DMS thin films; UV absorbance spectra; ZnO:Co; annealing temperatures; ferromagnetic materials; nanocluster-beam technique; saturation magnetization; temperature 200 degC; temperature 293 K to 298 K; temperature 400 degC; temperature 700 degC; Annealing; II-VI semiconductor materials; Magnetic semiconductors; Optical films; Saturation magnetization; Zinc oxide; ZnO thin film; annealing temperature; diluted magnetic semiconductor; nanoclusters;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2015 IEEE International

Conference_Location

Beijing

Print_ISBN

978-1-4799-7109-1

Type

conf

DOI

10.1109/IVEC.2015.7224024

Filename

7224024