• DocumentCode
    1865558
  • Title

    Impacts of O2 content on the properties of ZnO thin films prepared by magnetron sputtering

  • Author

    Chen Pan ; Zhiwei Zhao ; Chao Wang

  • Author_Institution
    Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A series of experiments for ZnO thin films were made by reactive DC magnetron sputtering different oxygen content in mixed gases. ZnO thin films prepared at 40% O2 content exhibited excellent properties, such as high transmittance, high band-gap energy. These features are benefit for the preparation of ZnO thin film transistors.
  • Keywords
    II-VI semiconductors; energy gap; infrared spectra; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; ZnO; band-gap energy; oxygen content; reactive DC magnetron sputtering; thin film transistors; transmittance; Gases; II-VI semiconductor materials; Magnetic films; Sputtering; X-ray diffraction; X-ray scattering; Zinc oxide; DC magnetron sputtering; O2 content; XRD; ZnO thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference (IVEC), 2015 IEEE International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7109-1
  • Type

    conf

  • DOI
    10.1109/IVEC.2015.7224026
  • Filename
    7224026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1865558