Title :
Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure
Author :
Huang, Pei-Hsuan ; Wang, Hsun Wen ; Tsai, Min-An ; Lai, Fang-I ; Kuo, Shou-Yi ; Kuo, H.C. ; Chi, Sien
Author_Institution :
Dept. of Photonics Eng., Yuan-Ze Univ., Chungli, Taiwan
Abstract :
In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum Isc is 13.512 mA/cm2, the open-circuit voltage (Voc) is 2.614 V, and the conversion efficiency (η) is 30.686 %. The enhancement of the Isc and the efficiency were 13.68 % and 12.24 %.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; indium compounds; solar cells; Crosslight APSYS software; InGaP-GaAs-Ge; base thickness; efficiency 12.24 percent; efficiency 13.68 percent; efficiency 30.686 percent; nanorod array surface texture structure; short-circuit current matching; size 0.36 mum; size 3.2 mum; subwavelength surface texture structure; triple-junction solar cell optimum design; voltage 2.614 V; Building integrated photovoltaics; Current density; Gallium arsenide; Junctions; Lighting; Photovoltaic cells; Surface texture;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186360
